? 2008 ixys corporation, all rights reserved symbol test conditions maximum ratings v ces t c = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c110 t c = 110c 48 a i cm t c = 25c, 1ms 280 a ssoa v ge = 15v, t vj = 125c, r g = 5 i cm = 120 a (rbsoa) clamped inductive load @ 600v p c t c = 25c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247)(to-220) 1.13/10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds99938a(05/08) ixga48n60b3 IXGP48N60B3 ixgh48n60b3 g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces 25 a v ge = 0v t j = 125c 250 a i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 32a, v ge = 15v, note 1 1.8 v v ces = 600v i c110 = 48a v ce(sat) 1.8v genx3 tm 600v igbt medium speed low vsat pt igbts 5-40 khz switching features z optimized for low conduction and switching losses z square rbsoa z international standard packages advantages z high power density z low gate drive requirement applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z welding machines z lamp ballasts to-263 (ixga) g e ( tab ) to-247 (ixgh) g c e ( tab ) to-220 (ixgp) g e c ( tab )
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60b3 IXGP48N60B3 ixgh48n60b3 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 30a, v ce = 10v, note 1 28 46 s c ies 3980 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 170 pf c res 45 pf q g 115 nc q ge i c = 40a, v ge = 15v, v ce = 0.5 ? v ces 21 nc q gc 40 nc t d(on) 22 ns t ri 25 ns e on 0.84 mj t d(off) 130 200 ns t fi 116 200 ns e off 0.66 1.20 mj t d(on) 19 ns t ri 25 ns e on 1.71 mj t d(off) 190 ns t fi 157 ns e off 1.30 mj r thjc 0.42 c/w r thcs (to-247) 0.25 c/w (to-220) 0.50 c/w note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 pins: 1 - gate 2 - drain 3 - source 4 - drain to-220 (ixgp) outline to-263 (ixga) outline dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixgh) outline inductive load, t j = 25c i c = 30a, v ge = 15v v ce = 480v, r g = 5 inductive load, t j = 125c i c = 30a, v ge = 15v v ce = 480v, r g = 5
? 2008 ixys corporation, all rights reserved ixga48n60b3 IXGP48N60B3 ixgh48n60b3 fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 0246810121416 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 80a i c = 40a i c = 20a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 80a 40a 20a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 v ge - volts i c - amperes t j = 125oc 25oc - 40oc
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60b3 IXGP48N60B3 ixgh48n60b3 fig. 11. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 7. transconductance 0 10 20 30 40 50 60 70 80 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 140 100 150 200 250 300 350 400 450 500 550 600 650 v ce - volts i c - amperes t j = 125oc r g = 5 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 40a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res ixys ref: g_48n60b3d1(56) 05-05-08-a
? 2008 ixys corporation, all rights reserved ixga48n60b3 IXGP48N60B3 ixgh48n60b3 fig. 12. inductive switching energy loss vs. gate resistance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 480v i c = 30a i c = 60a i c = 15a fig. 17. inductive turn-off switching times vs. gate resistance 120 130 140 150 160 170 180 190 200 210 220 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t f - nanoseconds 150 200 250 300 350 400 450 500 550 600 650 t d(off) - nanoseconds t f t d(off ) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 60a i c = 30a i c = 15a fig. 13. inductive switching energy loss vs. collector current 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 15 20 25 30 35 40 45 50 55 60 i c - amperes e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 e on - millijoules e off e on - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 30a i c = 60a i c = 15a fig. 16. inductive turn-off switching times vs. collector current 100 110 120 130 140 150 160 170 180 190 200 210 15 20 25 30 35 40 45 50 55 60 i c - amperes t f - nanoseconds 120 130 140 150 160 170 180 190 200 210 220 230 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc fig. 15. inductive turn-off switching times vs. junction temperature 100 110 120 130 140 150 160 170 180 190 200 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 120 130 140 150 160 170 180 190 200 210 220 t d(off) - nanoseconds t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 480v i c = 60a, 15a i c = 60a, 15a i c = 30a
ixys reserves the right to change limits, test conditions and dimensions. ixga48n60b3 IXGP48N60B3 ixgh48n60b3 ixys ref: g_48n60b3d1(56) 05-05-08-a fig. 18. inductive turn-on switching times vs. gate resistance 0 10 20 30 40 50 60 70 80 90 100 110 0 5 10 15 20 25 30 35 40 45 50 55 r g - ohms t r - nanoseconds 15 20 25 30 35 40 45 50 55 60 65 70 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 480v i c = 15a i c = 30a i c = 60a fig. 19. inductive turn-on switching times vs. collector current 10 15 20 25 30 35 40 45 50 55 60 15 20 25 30 35 40 45 50 55 60 i c - amperes t r - nanoseconds 18 19 20 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v t j = 125oc t j = 25oc 25oc < t j < 125oc fig. 20. inductive turn-on switching times vs. junction temperature 5 10 15 20 25 30 35 40 45 50 55 60 65 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds 16 17 18 19 20 21 22 23 24 25 26 27 28 t d(on) - nanoseconds t r t d(on) - - - - r g = 5 ? , v ge = 15v v ce = 480v i c = 15a i c = 30a i c = 60a
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